3D physics-based modelling of Ge-on-Si waveguide p-i-n photodetectors

摘要

Considering a Ge-on-Si waveguide p-i-n photodetector structure inspired by the literature, we have investigated the role of the detector geometry on its electrical and optical (O/E) bandwidth. Due to the structural complexity of the detector, three-dimensional coupled optical and electrical simulations were needed to implement an accurate model. To make an extensive 3D optimization study possible with an acceptable computational effort, numerical simulations were complemented by simplified analytical models, which helped to identify the most promising regions in the device geometrical parameter space.