Type-II quantum dot nanowire structures with large oscillator strengths for optical quantum gating applications

摘要

The exciton oscillator strength (OS) in type-II quantum dot (QD) nanowires is calculated by using a fast and efficient method. We propose a new structure in Double-Well QD (DWQD) nanowire that considerably increases OS of type-II QDs which is a key parameter in optical quantum gating in the stimulated Raman adiabatic passage (STIRAP) process [1] for implementing quantum gates.