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An area effective forward/reverse body bias generator for within-die variability compensation

机译:用于模芯内部可变性补偿的区域有效前进/倒档体偏置发生器

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To compensate the die-to-die and location correlated variation, we propose to split digital circuit to sub-mm-scale area controlling each area with an on-chip forward/reverse body bias generator (BBG). The proposed BBG is configured as a feedforward control system to achieve small area. The BBG is realized by combining a low output resistance DAC and a charge pump type level shifter. The BBG design is implemented with 1.2V thin gate oxide MOSFET in a 65nm CMOS technology. The simulation and measurement results show that the variation is compensated with an area overhead as small as 2%.
机译:为了补偿芯片到模具和位置相关的变化,我们建议将数字电路分开到控制每个区域的子MM刻度区域,其中芯片前进/反向体偏置发生器(BBG)。所提出的BBG被配置为前馈控制系统以实现小区域。通过组合低输出电阻DAC和电荷泵式电平移位来实现BBG。 BBG设计用65nm CMOS技术的1.2V薄栅极氧化物MOSFET实现。仿真和测量结果表明,该变型由面积开销补偿,小于2%。

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