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Manifestation of Donor Hybridized Electron States in Magnetism of Nickel Impurities in Mercury Selenide Crystals

机译:汞硒晶体镍杂质磁性磁性杂交的表现

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The temperature dependences of the magnetic susceptibility of crystal diluted magnetic semiconductor HgSe:Ni with the concentration of nickel impurities from 1·10~(18) to 1·10~(19) cm~(-3) were investigated. It was found that paramagnetic part of the susceptibility, which is wholly due to the effect of the Ni impurities, in the temperature range from 1.8 to 200 K is described by the Curie-Weiss law. The analysis of the concentration dependence of the Curie constant based on the model of the hybridized electronic states was carried out. The application of this model allowed us to determine the impurity parameters of crystals (the effective spin of the hybridized electronic states at the nickel impurity and the concentration of donor electrons).
机译:研究了晶体稀释磁半导体Hgse磁性敏感性的温度依赖性:Ni的浓度为1·10〜(18)至1·10〜(19)cm〜(-3)。结果发现,由居里 - 卫生法律描述了静脉曲张的敏感性的敏感性,这是由于Ni杂质的效果为1.8至200k的效果。进行了基于杂交电子态模型的居里常数浓度依赖性的分析。该模型的应用允许我们确定晶体的杂质参数(镍杂质处的杂交电子态的有效旋转和供体电子的浓度)。

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