Calculation of Gain in GaAlAs/GaAs Superlattice Laser due to Intersubband Longitudinal Optic (lo) Phonon Transitions

摘要

We have calculated the gain in GaAlAs/GaAs superlattice laser taking into account the intersubband transitions of electrons via longitudinal optic (lo) phonons. The lo phonons are treated by the dispersive continuum model. Gain variation with the well-width is studied considering both superlattice and bulk phonon model. The electron mobility is calculated and its variation with well-width is also studied. Comparison of the results has been exhibited for both the superlattice and bulk phonons.