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Influence of exciton energy on intersubband transition of chirped superlattice GaAs/AlGaAs quantum cascade laser

机译:激子能量对啁啾超晶格GaAs / AlgaAs量子级联激光器的基间转变的影响

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摘要

The influence of exciton energy on intersubband transition was simulated for a chirped supperlattice quantum cascade laser of GaAs/AlxGa1-xAs. Exciton energy was modelled as a function of QW width for alloys of various percentages of constituent elements. The results showed that the exciton energy decreased proportionally with increasing QW width. Models were also generated to study exciton energy as a function of the percent alloy contents of AlxGa1-xAs barriers for QWs of various widths. Exciton energy showed characteristics of higher discrete energy when QW width was narrower. Transition energy was also simulated from e(1) and e(2) to the 1s exciton state as functions of applied electric field at various QW widths. Our simulation results showed that the transition energy from e(2) to the 1s exciton state increased proportionally to the increasing strength of the electric field. This transition energy was indicative of THz range radiation.
机译:为GaAs / Alxga1-XA的啁啾沉淀量子级联激光器模拟了激子能量对三通带转变的影响。 激子能量被建模为QW宽度的QW宽度,用于组成元素的各种百分比的合金。 结果表明,随着QW宽度的增加,激子能量比例地降低。 还产生了模型以研究Exciton能量作为Alxga1-XAS屏障的百分比百分比各种宽度的函数。 当QW宽度较窄时,激子能量显示出较高的离散能量的特点。 作为应用电场在各种QW宽度下的函数,也从e(1)和e(2)模拟过渡能量。 我们的仿真结果表明,来自e(2)到1s激子状态的过渡能量与电场的增加的强度成比例地增加。 这种过渡能量表示THz范围辐射。

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