High Temperature Oxidation of SiC Powder in Oxidizing Atmosphere Containing Water Vapor

摘要

Oxidation of SiC powder was studied at 1373 K to 1873 K in Ar-O_2, Ar-H_2O, and Ar-O_2-H_2O using thermogravimetry. At 1373 K to 1573K, the weight gain increased with increasing water vapor pressure. The oxidation rate was evaluated on the basis of the Ginstering-Brounshtein kinetic model. In this temperature region, the apparent activation energy for the oxidation was almost the same (139-191 kJmol~(-1)) independent of the atmosphere, suggesting that the same oxidation process proceeds. On the other hand, at temperatures >1673 K, the weight gain in the dry O_2 (Ar-O_2) was greater than that in the wet and wet O_2 (Ar-H_2O and Ar-O_2-H_2O). The apparent activation energy in the dry O_2 (442 kJmol~(-1)) was much greater than that in the wet and wet O_2. We propose that water molecule diffused in silica layer in the wet and wet O_2 atmosphere at 1373 K to 1873 K.