PREDICT THERMAL RADIATIVE PROPERTIES OF NANOSCALE MULTILAYER STRUCTURES

摘要

In order to achieve high-accuracy temperature measurements in rapid thermal processing (RTP), it is critical to be able to determine the radiative properties of silicon wafers with thin-film coatings such as silicon dioxide and silicon nitride. In this Paper, the directional, spectral, and temperature dependency of the radiative properties for the Nanoscale multilayer structures are modeled consisting of silicon and related materials such as silicon dioxide, and silicon nitride.