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Effect of Ti Doping on Structural and ElectricalProperties of Ba(Fe(0.5)Nb.(0.5))O3Ceramic

机译:Ti掺杂对Ba(Fe(0.5)B.(0.5))O3陶瓷结构和电性能的影响

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Polycrystalline samples of Ba(Fe(1-x)Ti(2x)Nb(1-x)(0.5)O3(BF-EN) with x= 0, 0.1, 0.2 havebeen synthesized using a high-temperature solid-state reaction technique. The X-ray diffractionof the sample (x =0) at room temperature shows a monoclinic phase. When the doped contentsof Ti are over 10 mole% the structure changes from monoclinic to tetragonal. Scanning electronmicrographs of the compounds show that grains are uniformly and densely distributed over theentire surface of the sample. The complex impedance plots show that there is only bulk (grain)contribution in the compounds in the said temperature range, and is of non-Debye type ofrelaxation. Bulk resistance of the material has been observed to be concentration dependent.Conductivity analysis indicates that ac/dc conductivity of the materials increases with increase intemperature. It shows a typical negative temperature coefficient of resistance (NTCR) behaviourlike a semiconductor. The conductivity has been found to decrease on Ti doping.
机译:使用高温固态反应技术合成的Ba(Fe(1-x)Ti(2x)Nb(1-x)(0.5)O3(0.5)O 3(BF-Z)的多晶样品。样品(x = 0)在室温下的X射线衍射显示单斜相。当Ti的掺杂含量超过10摩尔%时,结构从单斜晶型变为四边形。化合物的扫描电子照片显示颗粒均匀和密集地分布在样品的脑表面上。复杂的阻抗图表明,在所述温度范围内的化合物中只有块状(晶粒)贡献,并且是非德语型的型。已经观察到材料的散热性是浓度dependent.Conductivity分析指示与增加intemperature材料增加该交流/直流电导率。它显示了电阻(NTCR)的behaviourlike半导体的典型负温度系数。电导率已经发现对Ti减少兴奋剂。

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