Nanorelief elements in reference measures for scanning electron microscopy

摘要

The single elements of relief (protrusions and steps) fabricated by anisotropic etching of the surface of the silicon wafer congruent the crystallographic plane (100) in the scanning electron microscope have been studied. The image registration in the low energy secondary electron collection mode was carried out, and the influence of the probe electron energy and its diameter on the microscope signal formation by relief elements scanning was studied. The electron beam energy varied at the range of 0.3 - 20 keV, the probe diameter changed in the limits of 14 – 500 nm. The widths of upper bases of protrusions varied within 14 - 500 nm. The correlation analysis of experimental results, carried out by the authors, demonstrate high quality of the structures studied.