Formation of thin ZrO_2 layers for nanotransistor gate structures byelectron beam evaporation

摘要

Zirconium oxide (ZrO_2) films have been deposited on cleaned and heated p-type Si (100) substrates by electron-beam evaporation technique. It is shown that the intermediate SiO_2 layer on ZrO_2/Si interface is absence. The W/YSZ/Si and Mo/YSZ/Si structures with 3÷20-nm-thick dielectric layers were formed by electron-beam evaporation technique. The fixed charge densities in 3-nm-thick YSZ layers are 3x10~(10) - 3.7x10~(10)cm~2, leakage current density at a voltage -1V achieves –7,9.10~(-7)A/cm~2.