Resonant Injection Enhanced Field Effect Transistor for Low Voltage Switching: Concept and Quantum Transport Simulation

摘要

A Resonant Injection Enhanced Field Effect Transistor (RIEFET) device concept for low voltage switching has been developed. Two-dimensional electrostatically self-consistent ballistic quantum transport simulations of device operation are provided. To reduce simulation time, the two dimensional ballistic transport code was parallelized. The potential significance of parasitic phonon-assisted transport also is explored in quasi-one-dimensional simulations of transport through the resonant barrier.