A Unified Approach for the Reliability Modeling of MOSFETs

摘要

Modeling capabilities and considerations to achieve a unified reliability model (URM) are addressed. The causes of the trap generation and their effects on the device characteristics serve the unified reliability model. A strategy taken in the SNU group based on the CLESICO system is introduced, where the hydrogen transport and trapping in the gate dielectric to form active carrier trapping sites and their effects on the device characteristics such as the current degradation are treated in a systematic and statistical manner. The treatment of the discrete nature of the trapped charges to model the RTS and 1/f noises are also introduced.