Photovoltaic Characteristics of Fabricated Carbon Based P-C/N-Si Hetero-Junction Solar Cells

摘要

The opto-electrical properties and photovoltaic characteristics of fabricated carbon based p-C/n-Si hetero-junction solar cells are reported. The cells performances have been given in the dark I-V rectifying curve and I-V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm2, 25°C). The open circuit voltage (V_(oc)) and short circuit current density (J_(sc)) for p-C/n-Si are observed to vary from 230 to 250 mV for different amount of dopant. The p-C/n-Si cell fabricated using the target with the amount of boron by 3 weight percentages shows highest energy conversion efficiency, η = 0.20% and fill factor, FF = 45%. The quantum efficiency (QE) of the p-C:B/n-Si cells are observed to improve with dopant content.