The Effect of Substrate Position of Zinc Oxide Growth by Thermal Evaporation

摘要

Zinc oxide films were grown on silicon substrate by heating Zn pellet at 930°C under the flow of mixed argon and oxygen gas. X-Ray Diffraction (XRD) spectra show well-defined peaks which indicate crystalline sample that matched very well with those of standard zinc oxide. Scanning Electron Microscopy (SEM) equipped with Energy Dispersive X-rays (EDX) reveal needle like structure while EDX confirming that mainly Zn and 0 elements are present in the sample. The effect of substrate position on the morphology of thin film was investigated. It shows that the distribution of needle likes ZnO structure decrease with decreasing distance from its evaporation source.