The Studies Of Doping Concentration Effects On VCSEL Laser

摘要

The numerical investigation of the performance of 850 nm GaAs single quantum wells (SQW) vertical cavity surface emitting laser (VCSEL) structure was carried out. Laser technology-integrated program ISETCAD simulation has been used to investigate the effect of the doping concentration on the output power performance. We proposed a new model where a few low-doped distributed Bragg reflector (DBR) layers are introduced just after spacer layers in order achieve a better matching of lattice constants. High output power and better efficiency were obtained with the proposed VCSEL structure. A very small deviation from the proposed structure will essentially affect the features of the light output. All material parameters are evaluated based on the recent literature values.