Amorphous carbon (a-C) thin films have been deposited on silicon substrates at different deposition temperatures ranging from 700°C - 800°C. The objective of this work is to investigate several electrical contacts on a-C thin films and to find the suitable method to fabricate ohmic contact on a-C thin films that prepared from a natural product, camphor (C_(10)H_(16)O). The a-C thin films were prepared with a simple thermal CVD method. In this study, Aurum (Au) and Platinum (Pt) were selected as the metal contact to a-C thin films. I-V characteristics measurement was carried out to study the contact between metal and a-C thin films. It was found that increasing deposition temperature also contributes to the variation I-V characteristics of a-C thin films.
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