Development of the Printed Top Gate Organic Thin Film Transistor (OTFT)

摘要

The active layer thickness and curing condition dependent performance of an organic thin film transistor (OTFT) with inkjetted organic semiconductor (OSC) layer is studied. The best performance of the OTFT was found when the thickness of OSC was ～120 nm cured at 60 °C. The performance enhancement of the OTFT with inkjetted OSC layer was discussed by comparing the OTFT with spin-coated OSC layer.