Design and Development of SiGe HBT based High Gain Amplifier for GPS Application

摘要

A two stage high gain small signal amplifier for GPS based receiver application is designed and realised using SiGe Hetrojunction Bipolar transistor (HBT). The measured gain and noise figure is 33.5 dB and 2.9dB respectively at Vce of 2V, and total current of 10mA. The circuit is fabricated on microstrip configuration using RT duroid substrate of dielectric constant 10.5 and height 50 mils. This circuit is being used in satellite based GPS receiver.