Two dimensional analytical modeling of multi-layered dielectric G4 MOSFET-A novel design

摘要

In this paper, we propose a new MOSFET design: Multi Layered Dielectric Four Gate MOSFET (G4-MLD MOSFET) and investigate its device performance through a two dimensional (2-D) analytical model by solving Poisson’s equation using parabolic potential profile approach. The 2-D analytical model gives physical insight into the electrical characteristics of this design in terms of surface potential profile, electric field distribution, threshold voltage, subthreshold slope, drain induced barrier lowering, drain current, drain conductance and transconductance variation between the lateral junction gates. The proposed design is superior to the conventional G4 MOSFET in terms of improved analog and switching performances making it an attractive solution for the ongoing integration process in analog and digital design technology.