Impact factors on the performance of Schottky barrier MOSFETs with asymmetric barrier height at source/drain

摘要

The performance of the n-channel Schottky barrier MOSFET with asymmetric barrier height at source/drain (A-SBFET) was numerically simulated. The impact factors on the performance are studied. The results suggest the on-state characteristics of the devices are mainly determined by the source-side barrier height (SBH). Increasing SBH or decreasing body thickness can optimize the sub-threshold slope, and decreasing SBH can enhance the on-state current.