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Vapor-Phase Deposition of N_3-Containing Monolayers on SiO_2 and Si_3N_4 for Wafer Scale Biofunctionalization

机译:用于晶片规模生物功能化的SiO_2和Si_3N_4上的含N_3的单层的含N_3的单层的蒸汽相沉积

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The vapor-phase deposition of 11-azidoundecyltrimethoxysilane monolayers at reduced pressure and elevated temperature allows the introduction of azido (N_3) functionalized silicon wafer substrates. This process can be optimized by controlling the amount of surface adsorbed water and results in uniform and reproducible self-assembled monolayers (SAMs). The N_3-SAM density as investigated via TOF-SIMS is comparable on thermal oxide and Si_3N_4 substrates. Furthermore, it is demonstrated that biomolecules can be successfully conjugated on both substrates using azide-alkyne 'click' reactions.
机译:11-亚氮杂亚烷基三甲氧基硅烷单层的气相沉积在减压下和升高的温度下允许引入Azido(N_3)官能化硅晶片基板。可以通过控制吸附的水量并导致均匀和可再现的自组装单层(SAMS)来优化该方法。通过TOF-SIMS研究的N_3-SAM密度在热氧化物和Si_3N_4基板上是可比的。此外,证明生物分子可以使用叠氮化物 - alkyne'点击'反应在两个基材上成功缀合。

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