Effect of Oxygen and Diborane Gas Ratio on P-type Amorphous Silicon Suboxides Layer

摘要

We report on the electrical and optical characterization of a-SiOx thin films prepared using silane and diluted N_2O by Helium for PECVD on glass and silicon substrates. In a thin film solar cell, the p-type layer should have a high E_(opt) to minimize optical absorption, as well as high conductivity for improved cell efficiency. We adjusted E_(opt) of the p-type layer by varying the N_2O and B_2H_6 gas ratio. The p-type a-SiO_x films have the E_(opt) values of about 1.99 eV.