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The addition effects of Zr and Ta in sol-gel derived InZrZnO and InTaZnO thin film transistors

机译:Zr和Ta在溶胶 - 凝胶中的添加效果来源于Zrzno和Intazno薄膜晶体管

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The effects of Zr and Ta contents on characteristics of InZnO films by a sol-gel method and their thin film transistor(TFTs) have been investigated. In particular, the effect of composition variation was studied by using solutions having various metal cation ratios to optimize transistor performance.
机译:研究了Zr和Ta含量对溶胶 - 凝胶法及其薄膜晶体管(TFT)对尼尔诺膜特性的影响及其薄膜晶体管(TFT)。特别地,通过使用具有各种金属阳离子比率的溶液来优化晶体管性能的溶液研究了组成变异的效果。

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