Improvement in performance of m-plane GaInN light emitting diode grown on m-plane SiC by sidewall epitaxial lateral overgrowth

摘要

GaInN-based light-emitting diodes having m-plane het-erostructures and multi quantum well (MQW) were fabricated on m-plane SiC by sidewall-seeded epitaxial lateral overgrowth. Defects such as stacking faults or dislocations strongly affect the emission wavelength and efficiency of MQW. Control of the VIII ratio during growth is found to be very effective for growing GaN from only one sidewall, by which we can reduce the area of the high-defect-density region. A light emitting diode (LED) with high internal quantum efficiency and an almost single peak LED was successfully fabricated.