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Study of electronic and magnetic properties of h-BN on Ni surfaces: A DFT approach

机译:Ni表面H-BN电子和磁性的研究:DFT方法

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Hexagonal boron nitride (h-BN) is a promising material for implementation in spintronics due to large band gap, low spin-orbit coupling, and a small lattice mismatch to graphene and close-packedsurfaces of fcc-Ni(111). Electronic and magnetic properties of single layer hexagonal Boron Nitride (h-BN) on Ni (111) surface have been studied with density functional calculation. Since lattice constants of nickel surfaces are very close to that of h-BN, nickel acts as a good substrate. We found that the interaction between 2P_z - 3d_(z~2) orbitals leads to change in electronic band structure as well as density of states which results spin polarization in h-BN.
机译:六边形氮化硼(H-BN)是一种有希望的材料,用于由于大带隙,低旋转轨道耦合和FCC-Ni(111)的石墨烯和近填充螺母的小晶格错配和FCC-Ni(111)的小晶格错配。已经研究了Ni(111)表面上的单层六方氮化硼(H-Bn)的电子和磁性,具有密度函数计算。由于镍表面的晶格常数非常接近H-Bn的常量,因此镍用作良好的基材。我们发现,2P_Z - 3D_(Z〜2)轨道之间的相互作用导致电子频带结构的改变以及结果在H-BN中的旋转极化的状态的密度。

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