Design of micro-power amplifier in neural recording application with improved noise efficiency factor

摘要

In this work, a low noise low power neural signal amplifier is presented. This amplifier consists of a first-order high pass filter and an OTA. We study the effect of using n-type MOSFET and p-type MOSFET in input stage of OTA, on its overall noise. Then two circuit schematic for overall amplifier is suggested. Finally, the simulation results of suggested amplifier are presented. The gain of amplifier is 41.5 dB at frequency range between 0.08 and 28 kHz. The total input noise of this circuit is 1.6 μV and the total power consumption is 5.5 μW from 1.2 v power supply. The NEF of our design is 1.6 that much lower than similar previous works. These results are extracted with 0.13 μm CMOS technology.