In the research field of crystalline silicon (c-Si) solar cells, electronic surface passivation has been recognized as a crucial step to achieve high conversion efficiencies. The main issue of this article is to analyze the surface passivation properties of both, n-type and p-type crystalline silicon wafers by hydrogenated amorphous silicon sub oxide [a-SiOx:H] films the for use in hetero-junction (a-Si/c-Si) solar cells. A window layer is obtained with a certain fraction of oxygen in the a-SiOx:H layers.
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