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Characterization and Model Enablement of High-Frequency Noise in 90nm CMOS Technology

机译:90nm CMOS技术中高频噪声的表征和模型能力

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摘要

A new method based on the lumped-element network representation of the pad-set parasitics is developed to extract the intrinsic drain current noise source and gate resistance from raw measurement data instead of direct de-embedding. The length dependence of BSIM noise model is also corrected using a sub-circuit in the model file. With the new method, we can finally integrate an improved and hardware verified noise model into design kits.
机译:开发了一种基于焊盘组寄生菌的集成元素网络表示的新方法,以提取来自原始测量数据的内在漏极电流噪声源和栅极电阻而不是直接去嵌入。使用模型文件中的子电路还校正了BSIM噪声模型的长度依赖性。通过新方法,我们最终可以将改进的和硬件验证的噪声模型集成到设计套件中。

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