Electron Tomography of Advanced Transistor Architectures

摘要

Electron tomography is a powerful method for the characterization of the three-dimensional features in advanced transistor architectures. Proper interpretation of the subtle features present in the reconstructed data requires that artifacts resulting from microscope limitations and the quality of both the translational and rotational alignment of the image stack. The approach we have outlined has the advantage of being completely automated, with little to no user input required, and results in quantifiable data that can be used to develop correlations between device manufacturing parameters and the structural features which they produce.