MONTE CARLO SIMULATIONS OF HELIUM AND NEON ION BEAM INDUCED DEPOSITION

摘要

The new Gas Field Ion Microscopes are able to deposit and etch material at the nanoscale in a highly controlled manner, but in order to exploit this capability it is necessary to have a detailed quantitative model of the process. A Monte Carlo simulation for He~+ and Ne~+ ion beam induced deposition (and etching) has been developed which provides data in excellent agreement with the observed experimental results over a wide range of experimental conditions. The ion beam induced nanoscale synthesis of PtC_x (where x～5) using the trimethyl (methylcyclopentadienyl)platinum(IV) (meCpPt~(IV)Me_3) precursor is investigated by performing Monte Carlo simulations of helium and neon ions integrated with a gas handling routine to mimic the precursor adsorption and decomposition.