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Effects of Nano-Al Doping on Superconductivity and Microstructure of MgB{sub}2 Bulk Superconductors

机译:纳米Al掺杂对MGB {Sub} 2散装超导体的超导电性和微观结构的影响

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Nano-size Al powders were dispersed by ultrasonic vibrations to avoid reuniting and could be doped into the MgB2 bulk materials uniformly. The effects and mechanism of doping were studied. The phase analysis and microstructure analysis show that, Al atoms can enter into the lattice of MgB{sub}2 and substitute the site of Mg atoms. The crystal parameters a and c of the MgB{sub}2 phase decrease gradually with increase of Al addition, and the value of c is depressed more. The critical temperature T{sub}c drops with the increase of Al addition. The value of T{sub}c is 35.5K for the superconductor with 8mol% addition, while 38.5K for the pure MgB{sub}2 bulk superconductor. The properties of critical current density J{sub}c(B) can be improved at low level doping such as 1mol%,2mol% addition. The results demonstrate that the superconductivity of MgB{sub}2 with nano-Al doping is improved at the conditions of low temperature, high magnetic field and low level addition.
机译:通过超声振动分散纳米尺寸Al粉末以避免重新统一,并且可以均匀地掺杂到MgB2散装材料中。研究了掺杂的效果和机制。相分析和微观结构分析表明,Al原子可以进入MGB {亚} 2的晶格,并替换Mg原子的部位。 MGB {Sub} 2相2相的晶体参数A和C随着AL的增加而逐渐降低,并且C的值抑制了更多。临界温度T {Sub} C随着AL添加的增加而下降。用于8mol%的超导体的T {Sub} C的值为35.5k,而纯MGB {Sub} 2散装超导体的38.5k。临界电流密度J {Sub} C(B)的性质可以在低水平掺杂下提高,例如1mol%,2mol%加法。结果表明,在低温,高磁场和低水平加法条件下,在纳米掺杂的MGB {Sub} 2的超导性得到改善。

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