Zinc oxide is a semiconductor material with a band gap of 3.37 eV at room temperature, which is similar to TiO_2 (3.2eV).[l] Most ZnO are n-type semiconductor, even without the absence of dopants.[2] Several studies have been carried out on lab scale for the use of ZnO as an alternative replacement material of TiO_2 nanoparticles in the dye-sensitized solar cell (DSC) applications, even though in general the effectiveness of the oxide layer of TiO_2 nano particles is still higher. [3] This is because ZnO has many potential advantages that are not owned by other semiconductors. The only problem for the practical DSCs is lower dye adsorption on the ZnO surface than on the TiO_2 surface. [4]
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