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Proton Irradiation Effect on CdSe-ZnS Core-Shell Nanocrystals Embedded in Ultra Violet Curable Resin

机译:质子辐照对嵌入超紫色固化树脂中的Cdse-ZnS核壳纳米晶体

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This work focuses on investigating the effect of proton irradiation on the optical properties of CdSe-ZnS core-shell nanocrystals embedded in ultra-violet curable resin. The excitonic transitions were measured using optical absorbance and photoluminescence (PL) techniques. Nanocrystals of three different diameters, 4.5nm, 2.7nm and 2.1nm were used which showed the first exciton peak at wavelengths 600nm, 552nm and 498nm respectively. These samples were subjected to 2MeV protons at different fluence levels. The optical absorbance spectra were collected after the exposure to protons. The integrated area of excitonic transition was monitored as a function of proton fluence. The results indicate that for 4.5nm nanocrystals, the proton irradiation doses up to 9.03 脳 1015 protons-cm-2 had little effect on the excitonic transitions. However radiation-related degradation seemed to increase with the decreasing size of nanocrystals. No excitonic transition was observed in 2.1nm nanocrystals from the fluence of 6 脳 1015 protons-cm-2. This seems to be due to the probable degradation in the resin with the increasing proton fluence. Photoluminescence (PL) measurements were also conducted on 4.5nm nanocrystals using Bomem FT spectrometer. The excitonic transitions were measured at 300K and 77K and small degradation has been observed as understood from the decreasing integrated area with the increasing proton fluence.
机译:这项工作侧重于研究质子辐射对嵌入超紫色固化树脂中Cdse-ZnS核 - 壳纳米晶体光学性质的影响。使用光学吸光度和光致发光(PL)技术测量激发器转变。使用三个不同直径的纳米晶体,4.5nm,2.7nm和2.1nm,其分别显示出600nm,552nm和498nm处的第一激子峰。将这些样品以不同的流量水平进行2mev质子。在暴露于质子后收集光学吸收光谱。被监测激发型转变的综合面积作为质子流量的函数。结果表明,对于4.5nm的纳米晶体,所述质子照射剂量达9.03脳10 15 质子厘米 -2 对激子跃迁的影响不大。然而,辐射相关的降解似乎随着纳米晶体的尺寸的降低而增加。在2.1nm的纳米晶体中观察到的从6脳10 15 质子厘米 -2 注量没有激子跃迁。这似乎是由于树脂可能的降解,质子较高。使用Bomem FT光谱仪在4.5nm纳米晶体上也进行光致发光(PL)测量。在300k和77K中测量激发器转变,并从减少综合面积与增加的质子流量的降低的综合区域理解,已经观察到77K和小降解。

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