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ELECTROCHEMICAL FAILURES AS A FUNCTION OF FLUX VOLUME UNDER BOTTOM TERMINATED COMPONENTS

机译:电化学故障作为底部封端组分下的磁通量的函数

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The activity of flux residue changes, when trapped under low profile leadless or bottom terminated components. There are three factors to consider: 1.) Standoff gap - Lower standoff gaps block outgassing channels. Low standoff gaps change the nature of the flux residue by leaving behind flux activators, solvents, and functional additives that normally would be outgassed from the residue. 2.) Narrow Pitch -Miniaturized components have a decreased distance between conductors of opposite polarity. There is a higher potential to bridge conductors with flux residue. 3.) Cubic Volume of Flux - Increased I/O in combination with thermal lugs creates a higher cubic volume of flux left under the bottom termination. High flux volumes can block outgassing channels and bridge conductors. A QFN test board was designed to study the research hypothesis that electrochemical failure phenomena are related to the volume of flux residues present under the bottom terminated components. The designed test board (QFN-11) has four quadrants with varying mounting pad dimensions and component standoffs, resulting in varying amounts of flux volume. The test boards were evaluated using surface insulation resistance (SIR) methodologies, followed by visual analysis of the areas under the BTC components. An understanding of the relationship between flux volume and BTC pattern design is expected to aid assemblers in mounting pad design to reduce the risk of electrochemical failures.
机译:助焊剂残留物的活性发生变化,当捕获在低轮廓无方向或底部封端的组分下。有三个因素需要考虑:1。)支座间隙 - 较低的支座差距块放大渠道。低梯级间隙通过留下焊剂活化剂,溶剂和通常将从残余物中除去的功能添加剂来改变助熔剂残留物的性质。 2.)窄间距 - 仿生化成分在相反极性的导体之间具有降低的距离。桥接导体具有较高的助焊剂。 3.)与热凸耳组合的磁通量的立方体积 - 增加,在底部终端下留下了更高的立方体积的磁通量。高通量容积可以阻挡除通道和桥接导线。 QFN测试板旨在研究研究假说,即电化学衰竭现象与底部封端的组分下存在的助熔剂残留量有关。设计的测试板(QFN-11)有四个具有不同安装焊盘尺寸和元件支架的象限,导致不同量的磁通量。使用表面绝缘电阻(SIR)方法评估测试板,然后通过对BTC组件下的区域进行视觉分析。预计磁通量和BTC图案设计之间的关系的理解将有助于安装垫设计中的汇编器,以降低电化学故障的风险。

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