PROVIDING PRECISION MECHATRONIC SOLUTIONS FOR THE CHALLENGES OF EUV-LITHOGRAPHY

摘要

The EUV light is produced by plasma. Currently two types of sources are considered: laser produced plasma (LPP) or discharge produced plasma (DPP). The emitted light of the plasma is (partly) collected by the collector optics and then shaped by the illuminator optics into a ring-shaped field on the reflective reticle. The projection optics produces a 4X reduction of the reticle image on the wafer EUVL faces all common precision challenges related to sub-50nm lithography. One of the driving aspects in the design of sub-50nm lithography tools is the overlay performance of a few nanometers that has to be guaranteed. This asks for (sub)nanometer stage and metrology performance.