Investigation of Strain-Temperature Stress Effects on the Characteristics of MOS Capacitors with Ultra-thin Gate Oxides

摘要

A method called strain-temperature stress was adopted in this work to improve the quality of ultrathin oxide. A reduced current-voltage (J-V) curve could be observed after tensile-temperature stress without increasing the oxide thickness. Besides, the characteristic of time-dependent-dielectric-breakdown (TDDB) is also improved after tensile-temperature stress treatment. A reduced interface state density (D{sub}(it)) could also be observed. As the result, the tensile-temperature stress is suggested as a possible technique to enhance the performance of ultrathin oxide in MOS structure.