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Diode side-pumped, high efficiency Nd:YVO{sub}4 laser and improvement in beam quality

机译:二极管侧泵浦,高效率Nd:YVO {Sub} 4激光和光束质量的改进

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Diode pumped solid state laser are developing at a very fast rate. At the same time, materials that in some aspects have better characteristics than Nd:YAG are on the market such as Nd:YVO{sub}4, Nd:GdVO{sub}4, Yb:YAG and others. Within the existing variety of geometries and gain materials there is one combination that is particularly interesting because of its reduced complexity and high efficiency: the edge-pumped slab-laser using grazing-incidence geometry and a gain media with a very high pump absorption cross-section. Previously, we demonstrated high efficiency in multimode with a side-pumped Nd:YVO{sub}4 laser using a grazing incidence geometry [1]. In this work, we describe a compact cavity with high slope efficiency with one pass inside the gain media and a significant improvement in beam quality with a novel cavity with only three mirrors and a second pass inside the gain media. Moreover, this cavity uses joint stability zones, giving therefore almost constant beam parameters throughout a wide range of pump powers. The laser crystal is a Nd:YVO{sub}4 with 1.1 at.% neodymium doping with dimensions 22×5×2 mm{sup}3. The end faces (5×2 mm{sup}2) have AR coating for the 1064 nm laser. The crystal is pumped on the 22×5mm{sup}2 edge face, which has AR coating for the 808 nm wavelength. The pump source is a 48 watts TM-polarized diode bar operating at 808 nm with the TM polarization parallel to the c-axis of the crystal.
机译:二极管泵浦固态激光器以非常快的速率开发。同时,在某些方面具有比ND更好的材料:YAG在市场上,如ND:YVO {Sub} 4,ND:GDVO {Sub} 4,YB:YAG等。在现有的各种几何形状和增益材料中,由于其降低的复杂性和高效率,有一种特别有趣的组合:使用放牧发生几何形状和具有非常高的泵吸收的增益介质的边缘泵浦滑动激光器部分。以前,我们用侧面泵送的Nd:YVO {Sub} 4激光器展示了高效率的使用放射性发生率几何[1]。在这项工作中,我们描述了一种具有高斜坡效率的紧凑型腔,在增益介质内部通行,并且具有仅具有三个镜子的小型腔的光束质量的显着改善,并且在增益介质内部的第二次通过。此外,该腔使用联合稳定区域,在整个泵浦功率下提供几乎恒定的光束参数。激光晶体是Nd:YVO {Sub} 4,具有1.1。%钕掺杂尺寸22×5×2mm {sup} 3。端面(5×2mm {sup} 2)具有1064nm激光器的AR涂层。将晶体泵送在22×5mm {sup} 2边缘面上,其具有用于808nm波长的Ar涂层。泵浦源是48瓦TM偏振二极管条,其在808nm下操作,与晶体的C轴平行的TM偏振。

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