Charge Loss Measurement under illumination in Single-Poly One-Time-Programming Floating Gate Non-Volatile-Memories

摘要

Charge loss in single poly OTP FG-NVM embedded in a smart power circuit is studied under illumination. It is found that the leakage current is due to photo-field emission for both intrinsic and extrinsic cells. The two types of cells can be discriminated from aging experiment at near room temperature. The acceleration factor is much higher than during bake at high temperature.