Study on Ferroelectric Properties of Nd-Doped Bi{sub}4Ti{sub}3O{sub}12 Thin Films Prepared by Sol-Gel Method

摘要

Nd-doped bismuth titanate Bi{sub}(4-x)Nd{sub}xTi{sub}3O{sub}12 (BNT) thin films were fabricated on Pt/Ti/SiO{sub}2/Si substrates by sol-gel method and spin-coating technique. The structures and the ferroelectric properties of the films were investigated. Nd doping leads to a marked improvement in the remanent polarization (P{sub}r) and the coercive field (E{sub}c). At the applied electric field of 260 kV/cm, P{sub}r and E{sub}c of the BNT film with x=0.5 annealed at 650°C are 19 μC/cm{sup}2 and 135 kV/cm, respectively. Moreover, the BNT film with x=0.5 showed a fatiguefree behavior up to 3×10{sup}10 read/write cycles.