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Fabrication of Ceramic Dielectrics on Base-Metal Foils for Embedded Capacitors

机译:嵌入式电容器底金属箔上的陶瓷电介质的制造

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Development of power electronics system devices with higher performance, improved reliability, and smaller size and weight requires the passive components to be embedded within a printed wire board (PWB). The "film-on-foil" approach for depositing the passive component on base-metal foil is the most viable fabrication method for embedding the components within a PWB. We have deposited high-permittivity lead lanthanum zirconate titanate (PLZT) ceramic dielectric films on base metal foils by a chemical solution deposition technique. These prefabricated "film-on-foil" dielectric sheets can be embedded into PWBs for power electronics applications. We have measured a dielectric constant of 1300 (at 25°C) and 1800 (at 150°C), leakage current density of 6.6 × 10~(-9) A/cm~2 (at 25°C) and 1.4 × 10~(-8) A/cm~2 (at 150°C), and breakdown field strength of ≈2.5 MV/cm on PLZT films deposited on conductive lanthanum nickel oxide-buffered Ni foils. Also, initial results were encouraging with samples of PLZT on Cu foils processed under a controlled atmosphere, which gave dielectric constant >500. The dielectric properties of film-on-foil PLZT samples are presented in this paper.
机译:电力电子系统设备的开发具有更高的性能,提高可靠性和更小的尺寸和重量,需要嵌入印刷线板(PWB)内的无源部件。用于在基础金属箔上沉积无源部件的“薄膜箔”方法是用于将组件嵌入PWB内的最活泼的制造方法。通过化学溶液沉积技术,我们在贱金属箔上沉积高介质铅镧锆钛酸钛酸盐(PLZT)陶瓷介电膜。这些预制的“薄膜膜”介电片可以嵌入到PWB中,用于电力电子应用。我们已经测量了1300(在25℃)和1800(150℃)的介电常数,漏电流密度为6.6×10〜(-9)A / cm〜2(在25°C)和1.4×10时〜(-8)A / cm〜2(150°C),沉积在导电镧镍氧化物缓冲的Ni箔上的PLZT膜上的击穿场强度为≈2.5mV/ cm。此外,初始结果令人抱怨PLZT上的PLZT样品在受控气氛下加工的Cu箔,其产生介电常数> 500。本文提出了薄膜箔PLZT样品的介电性能。

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