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Electronic Structure of AgPbmSbTem+2 Compounds - Implications on Thermoelectric Properties

机译:AGPMMSBTEM + 2化合物的电子结构 - 对热电性能的影响

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Novel quaternary compounds AgPb,nSbTem+2 (LAST-m) with different m values have been synthesized recently and some of these compounds show promising thermoelectric properties at high temperatures. The two end members of the series, PbTe (m=oo) and AgSbTe? (m=0), are also known to be good thermoelectrics. In this paper, we discuss the results of ab initio electronic structure calculations for these two end members and for LAST-2 and LAST-14 to see how the electronic structure near the chemical potential u evolves with m. Whereas PbTe and LAST-14 are narrow band gap semiconductors, the other two compounds show pseudo-gap structure. Even in the absence of a true gap, the rapidly varying density of states (DOS) near u may be conducive to large Seebeck coefficient in LAST-2, LAST-14, and AgSbTea.
机译:最近已经合成了新型季化合物AGPB,具有不同M值的NSBTem + 2(Last-M),其中一些化合物在高温下显示出具有的热电性能。该系列的两个结束成员,PBTE(M = OO)和AGSBTE? (m = 0),也称为良好的热电。在本文中,我们讨论了这两个终端成员的AB Initio电子结构计算的结果,以及最后2和最后14个,以了解如何用M演化的化学潜力附近的电子结构。虽然PBTE和Last-14是窄带间隙半导体,但另外两个化合物显示出伪间隙结构。即使在没有真正的差距的情况下,靠近U附近的状态(DOS)的迅速变化的密度也可能有利于最后2,最后14和Agsbtea的大型塞贝克系数。

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