High-resolution characterization of yttria-doped zirconia/semiconductor interfaces using ion scattering

摘要

Understanding the physical and chemical nature of oxide-semiconductor interfaces is of tremendous importance in advanced semiconductor and electron spin-based devices. In this paper, we report our results on synthesis and characterization of Y-doped ZrO_2 thin films prepared by electron-beam evaporation on Si and Ge substrates. The substrates were chosen not only for their technological relevance but also due to their differing tendencies towards formation of interfacial layers with oxides. The various samples have been studied using high-resolution ion scattering techniques to analyze the oxygen distribution and defect chemistry. In addition, the structural quality and interface stability have been explored using ion channeling techniques. We will discuss in detail the role of surface preparation, oxygenation of the film during deposition and annealing effects on the structure and stability of interfaces in these novel materials systems