Rapid Microwave Annealing of Nitrogen Implanted Silicon Carbide

摘要

Solid-state microwave rapid thermal processing was used to anneal nitrogen ion-implanted 6H-SiC. Surface roughness of the samples annealed at 1770 deg C for 25 s is 2.5 nm, which is almost an order better than the values obtained for conventional furnace annealing at comparable temperatures. This is due to a high temperature-rise (> 600 deg C/s) and -fall (400 deg C/s) rates of the microwave annealing. The lattice quality of the microwave annealed material is better than the conventional furnace annealing. The resistivity obtained for 1770 deg C / 25 s microwave annealing on 50 keV / 3.1 X 10~(15) cm~(-2) N~+ implantation is 14.5 m OMEGA-cm.