We present results of room temperature studies of the electrical characteristics of back-gated ultrathin graphite films prepared by mechanical transfer of thin sections of Highly Oriented Pyrolytic Graphite (HOPG) to a Si/SiO_2 substrate. The films studied were quite thin, exhibiting only a few graphene layers (n). Films with thickness in the range 1 ＜ n ＜ 20 were studied, where n has been deduced by Atomic Force Microscopy (AFM) z-scans. The n value deduced by AFM z-scan data was correlated with the n value deduced by Raman scattering data. We discuss at some length, the issue of whether or not Raman scattering can provide a standalone measure of n. Electrical contacts were made to a few of the low n (n= 1,2,3) graphene films. Most graphene films exhibited a nearly symmetric resistance (R) anomaly vs. gate voltage (V_G) in the range 25 ＜ V_G ＜ 110 V; some films exhibited as much as a factor of ～50 decrease in R (relative to the maximum R) with changing V_G. An interesting low bias shoulder on the negative side of the resistance peak anomaly was also observed. The devices were fabricated with a lithography free process.
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