【24h】

A Low-Voltage Bandgap Reference with Resistive Subdivision

机译:具有电阻细分的低压带隙参考

获取原文

摘要

In this paper, a sub 1V bandgap voltage reference (BGR) with Resistive Subdivision in CMOS technology is described. The proposed topology is based on the combination of two elements' voltages of opposite temperature coefficients. By using resistive subdivision methods, maximum input voltage of a p-channel input operational amplifier can be reduced and the problem of sub 1V supply voltage is solved without complex low supply voltage amplifier. Inserting a capacitance Cc to ground at V{sub}(REF) can result in an improvement in power supply rejection ratio. The proposed circuit was verified by spectre simulations, using standard 0.25 μm CMOS process, and the results show that the presented bandgap reference can successfully operate at sub 1V supply and has a temperature coefficient of 25ppm/°C over a temperature range from 0°C to 100°C. The power supply rejection ratio (PSRR) is high at low frequencies, and an added Cc is helpful for PSRR at high frequencies.
机译:在本文中,描述了CMOS技术具有电阻细分的子1V带隙电压参考(BGR)。所提出的拓扑基于相反温度系数的两个元素电压的组合。通过使用电阻细分方法,可以降低P沟道输入运算放大器的最大输入电压,并且在没有复数低电源电压放大器的情况下解决了亚1V电源电压的问题。在V {Sub}(REF)下将电容CC插入到接地,可以导致电源抑制比的提高。通过幽灵仿真验证了所提出的电路,使用标准的0.25μmCMOS工艺验证,结果表明,所示的带隙参考可以在亚1V电源上成功运行,并且在0°C的温度范围内的温度系数为25ppm /°C到100°C。电源抑制比(PSRR)高频率高,并且添加的CC在高频下有助于PSRR。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号