Compact modeling and performance analysis of Double-Gate MOSFET-based circuits

摘要

This paper presents the implementation in an analog IC circuit simulator (Eldo™) of a compact model for symmetric Double-Gate (DG) MOSFET and the evaluation of performances of simple DG-based circuits. A compact model for intrinsic long channel DG devices including analytical drain current and node charges for both n- and p-channel DG transistors are implemented in Eldo. The model is firstly validated by DC numerical simulations in terms of drain current. Secondly, the transient characteristics of DG-based inverters and ring oscillators are simulated in Eldo. The inverter time responses as well as the inverter delays are finally compared to numerical results obtained via a mixed-mode simulation approach.