A 910nW delta sigma modulator using 65nm SOTB technology for mixed signal IC of IoT applications

摘要

A 910nW 46fJ/conv 0.036mm2 delta sigma modulator is demonstrated. The chip was fabricated using 65nm SOTB (Silicon on Thin Buried oxide) technology, in which 13.4pJ/cycle 0.14uA Sleep Current CPU with 15nA VBB generator was obtained, resulting in achieving ultra-low power mixed signal IC for IoT applications.