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Comparison of the gain recovery times in low dimensional semiconductor amplifiers at 1.55 μm

机译：在1.55μm的低尺寸半导体放大器中的增益恢复时间的比较

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We compare experimentally the gain recovery times of quantum dot, quantum dash, and quantum well amplifiers based on InP and operating at 1.55 μm. The QD device gives the shortest recovery time of ～15 ps.

机译：我们基于INP的基于INP的量子点，量子划线和量子阱放大器的增益恢复时间进行比较，并在1.55μm下工作。 QD设备提供最短的恢复时间〜15 ps。

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《IEEE LEOS Annual Meeting Conference》|2006年||共2页
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A. J. Zilkie; J. Meier; P. W. E. Smith; M. Mojahedi; J. S. Aitchison; P. J. Poole; C. Ni. Allen; P. Barrios; D. Poitras; R. H. Wang; T. J. Rotter; C. Yang; A. Stintz; K. J. Malloy;
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1. Suppression of slow gain recovery in ultralong quantum-dash semiconductor optical amplifier emitting at 1.55 (mu)m [J] . Minh Nguyet Ngo, Gwenaelle Girault, Mathilde Gay, Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter . 2011,第20期

机译：抑制以1.55μm发射的超长量子点半导体光放大器中的缓慢增益恢复
2. Time-Resolved Linewidth Enhancement Factors in Quantum Dot and Higher-Dimensional Semiconductor Amplifiers Operating at 1.55 $mu{hbox{m}}$ [J] . Zilkie A. J., Meier J., Mojahedi M., Journal of Lightwave Technology . 2008,第11期

机译：量子点和更高尺寸的半导体放大器在1.55下的时间分辨线宽增强因子$ mu {hbox {m}} $
3. 1.55 mu m multiquantum well semiconductor optical amplifier with low gain ripple and high coupling efficiency for photonic circuit integration [J] . Newkirk M.A., Miller B.I. Electronics Letters . 1993,第5期

机译：具有低增益纹波和高耦合效率的1.55μm多量子阱半导体光放大器，用于光子电路集成
4. Comparison of the gain recovery times in low dimensional semiconductor amplifiers at 1.55 μm [C] . A. J. Zilkie, J. Meier, P. W. E. Smith, IEEE LEOS Annual Meeting Conference . 2006

机译：在1.55μm的低尺寸半导体放大器中的增益恢复时间的比较
5. High-speed properties of 1.55-mum-wavelength quantum dot semiconductor amplifiers and comparison with higher-dimensional structures. [D] . Zilkie, Aaron J. 2008

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Comparison of the gain recovery times in low dimensional semiconductor amplifiers at 1.55 μm

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