We have studied spin-transfer induced magnetization dynamics in samples with a synthetic pinned layer and very soft free layer, patterned into square pillars with a lateral size of the order of 100nm. The free and the reference layers have been laminated by insertion of very thin Cu layers, so as to increase the resistance of the active part of the spin-valves. The resistance of the pillars was of the order of 5Ω, and the measured magnetoresistance reached 2.5%. The coercivity of the free layer varied between 5 and 150Oe and a magnetostatic coupling of the same order of magnitude was measured in most cases, favoring the antiparallel state. The exchange bias field of the synthetic layer was commonly around 1200Oe. The critical current densities for switching the free layer were of the order of 10{sup}7A/cm{sup}2.
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机译：我们已经研究了用合成固定层和非常柔软的自由层的样品中的旋转转移诱导的磁化动力学，图案化成正方形柱，横向尺寸为100nm。通过插入非常薄的Cu层来层压自由和参考层，从而增加旋转阀的有源部分的电阻。柱的电阻为5Ω，测定的磁阻达到2.5％。在大多数情况下测量自由层的矫顽力在大多数情况下，在大多数情况下，在大多数情况下测量相同数量级的磁耦合，并且有利于反平行状态。合成层的交换偏置场通常约为1200o。切换自由层的临界电流密度为10 {sup} 7a / cm {sup} 2的顺序。
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